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[Sphenix-electronics-l] Discussion with Hamamatsu Rep
- From: eric mannel <mannel AT bnl.gov>
- To: sphenix-electronics-l AT lists.bnl.gov
- Subject: [Sphenix-electronics-l] Discussion with Hamamatsu Rep
- Date: Wed, 5 Feb 2020 16:37:24 -0500
I had a phone conversation this afternoon with our Hamamatsu rep Ardavan.
He clarified with how they are doing the mass testing and sorting.
For the mass devices they measure the log(I)-V curve of the device and determine the inflection point, V(peak) as they call it in the literature of the curve. The difference V(peak)-V(br) depends only on the type of SiPM and not the break down voltage. For mass production they determine this difference for 1 device and then measure only V(peak) for the rest of the devices. They the determine V(op) to be V(br)+ 4V or V(peak)+V(diff)+ 4V which is what they bin and send to us in trays. The blanket statement is that our devices will have a gain of 2.3x 10^5 at 4 V over V(op).
I am still a little unclear on how exactly they do the gain measurement for the 30 devices, but I think that is by looking at the single pixel spectrum, but I am waiting for confirmation.
I put the hamamatsu tech note that describes this in Docdb: https://docdb.sphenix.bnl.gov/0001/000159/017/mppc_kapd9005e.pdf
Eric
--
Eric Mannel, Ph.D.
PHENIX Group
Dept of Physics
Brookhaven National Lab.
631/344-7626 (Office)
914/659-3235 (Mobile)
- [Sphenix-electronics-l] Discussion with Hamamatsu Rep, eric mannel, 02/05/2020
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